Wide-bandgap metal-oxide thin-film transistors are a promising technology for enabling future advances in heterogeneous integration, thanks to the phenomenally low leakage current, high mobility and excellent switching characteristics. In this work, we demonstrate a novel integration of an ultra-low leakage ZnO TFT with a high-endurance SiC memristor to form a single 1T1R (one transistor, one memristor) memory cell with high selectivity, low current leakage below 100 fA, and scalability to larger memory arrays.