セッション情報

*Junichiro Sameshima¹, Aya Takenaka¹, Yuichi Muraji¹, Yoshihiko Nakata¹, Masanobu Yoshikawa¹, Katsumasa Suganuma² (1. Toray Research Center, Inc.(Japan), 2. Osaka Univ.(Japan))

15:30 〜 15:45

[Tu-3A-07LN] Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides

*Xufang Zhang¹, Dai Okamoto¹, Mitsuru Sometani², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1. Tsukuba Univ.(Japan), 2. AIST(Japan))

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セッション情報

[Tu-3A] Transition Layer & Fluctuations

[Tu-3A-01(Invited)] Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO2/SiC Systems

[Tu-3A-02] Calculation of mobility and localized-state density at SiO2/SiC interface with random fluctuation

[Tu-3A-03] Depth-Resolved Analysis of the SiO2/4H-SiC Interface using Low-Energy Muons

[Tu-3A-04] Evidence of a Transition Layer at the SiO2 / 4H-SiC MOS Interface from AC Conductance Data

[Tu-3A-05] Influence of non-uniform interface defect distribution on channel mobility in SiC MOSFETs investigated by local deep level transient spectroscopy and device simulation

[Tu-3A-06] Profiling with Depth Resolution of Sub-nm for SiO2/SiC Interface by Dual-beam TOF-SIMS Combined with Simulation

[Tu-3A-07LN] Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides

認証

[Tu-3A-01(Invited)] Interface State Density Distributions near The Conduction Band Edge Originating from The Conduction Band Fluctuation in SiO₂/SiC Systems

[Tu-3A-02] Calculation of mobility and localized-state density at SiO₂/SiC interface with random fluctuation

[Tu-3A-03] Depth-Resolved Analysis of the SiO₂/4H-SiC Interface using Low-Energy Muons

[Tu-3A-04] Evidence of a Transition Layer at the SiO₂ / 4H-SiC MOS Interface from AC Conductance Data

[Tu-3A-06] Profiling with Depth Resolution of Sub-nm for SiO₂/SiC Interface by Dual-beam TOF-SIMS Combined with Simulation