2015年 第76回応用物理学会秋季学術講演会

講演情報

一般セッション(口頭講演)

15 結晶工学 » 15.1 バルク結晶成長

[14p-2K-1~17] 15.1 バルク結晶成長

2015年9月14日(月) 13:45 〜 18:15 2K (225)

座長:荻野 拓(東大),鎌田 圭(東北大)

15:30 〜 15:45

[14p-2K-8] Piezoelectric Ca3TaAl3Si2O14 (CTAS) Single Crystals for High Temperature Sensors

〇(D)Xiuwei Fu1,2, Encarnacion G. Villora1, Isao Sakaguchi1, Yuuki Kitanaka3, Yuji Noguchi3, Masaru Miyayama3, Kiyoshi Shimamura1,2, Naoki Ohashi1,4 (1.NIMS, 2.Waseda Univ., 3.The Univ. Tokyo, 4.Tokyo Inst. Tech.)

キーワード:Piezoelectric,Langasite,High temperature sensors

The piezoelectric langasite family is attracting much attention for high temperature sensor applications. These crystals do not present any phase transition up to their melting point (1300-1500oC), exhibit good piezoelectric properties, are not pyroelectric, and can be grown by the Czochralski technique. Among them, the ordered Ca3TaAl3Si2O14 (CTAS) crystal is of particular interest, since it is Ga-free and exhibits high resistivity and thermal stability of dielectric and electromechanical properties. In this work, high quality CTAS single crystals have been grown successfully by the Cz method. The effect of growth conditions on their piezoelectric, electric and optical properties has been examined for the first time in detail. A notable influence is observed, especially in resistivity, which could be increased beyond the reported values for the same CTAS single crystals.