[12p-P14-1~3] 15.1 バルク結晶成長

▲ [12p-P14-1] Thermoelectric properties of compositionally homogeneous p and n-type SiGe bulk crystals

〇Omprakash Muthusamy¹, Arivanandhan Mukannan¹, Tadanobu Koyama¹, Yoshimi Momose¹, Hiroya Ikeda¹, Hirokazu Tatsuoka¹, Yasunori Okano², Tetsuo Ozawa³, Yuko Inatomi⁴, Bhattacharya Shovit⁵, Aswal Dinesh⁵, MoorthyBabu Sridharan⁶, Yasuhiro Hayakawa¹ (1.RIE Shizuoka Univ, 2.Osaka Univ., 3.Shizuoka Insti Sci., 4.JAXA, 5.BARC, 6.Anna Univ)

キーワード：SiGe,Impurity,Thermoelectric properties