2016年第63回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

13 半導体 » 13.10 化合物太陽電池

[21a-S221-1~11] 13.10 化合物太陽電池

2016年3月21日(月) 09:30 〜 12:15 S221 (南2号館)

荒木 秀明(長岡高専)

11:15 〜 11:30

[21a-S221-8] Comparative study of self-constituent buffer layers for synthesis Cu2ZnSnS4 thin films

〇(D)Fu Shengwen1、Chen HuiJu1、Shih ChuanFeng1 (1.Cheng Kung Univ.)

キーワード:CZTS,Solar cell,Adhesion

Cu2ZnSnS4 (CZTS) is a promising absorber material because of its earth abundant and non-toxic constituents. The major challenge for synthesis the high-efficiency CZTS solar cell is the high-density voids and secondary phases at the interface of the CZTS absorber and the Mo back contact. To overcome this problem, we comparatively study the effect of inserting a self-constituent buffer layer such as CuS, SnS and ZnS between the CZTS and Mo substrate. Influences of these buffer materials on the phase purity, crystallinity, interface quality and elementary segregation of the CZTS films made by metal precursors were presented. Insertion of a CuS buffer layer introduced severe interfacial defects like voids. Insertion of the ZnS buffer layer improved the crystal quality of the CZTS, but ZnS accumulated at the Mo/CZTS interface. A crack-free, pinhole-free, and high quality CZTS thin film was obtained by insertion of a SnS buffer layer.