13:30 〜 15:30
▼ [18p-PB1-30] Electrical spin injection into an AlGaAs/GaAs-based 2DEG system with a half-metallic spin source
キーワード：spin injection, 2DEG channel, half-metallic spin source
The injection of spin-polarized electrons from ferromagnets into semiconductors has attracted much interest for creating spin transistors. Spin injection into bulk semiconductors such as GaAs [1], Si [2], and Ge [3] has been realized at room temperature. On the other hand, a two-dimensional electron gas (2DEG) structure of AlGaAs/GaAs has attracted much interest for its high electron mobility, and it is used for high electron mobility transistors.
Although electrical spin injection into an AlGaAs/GaAs 2DEG channel has been achieved by using GaMnAs as a spin source [4], the demonstration of spin injection was limited below 50 K because of the low Curie temperature (TC < ~200 K) of GaMnAs. Recently, we demonstrated spin injection into an AlGaAs/GaAs 2DEG channel up to 138 K by using CoFe (TC > 1000 K) as a spin source [5]. However, the spin polarization for this device was relatively low. In this study, we used a half-metallic material of Co2MnSi as a spin source and demonstrated spin injection into an AlGaAs/GaAs 2DEG channel with a relatively high spin polarization at 77 K.
Although electrical spin injection into an AlGaAs/GaAs 2DEG channel has been achieved by using GaMnAs as a spin source [4], the demonstration of spin injection was limited below 50 K because of the low Curie temperature (TC < ~200 K) of GaMnAs. Recently, we demonstrated spin injection into an AlGaAs/GaAs 2DEG channel up to 138 K by using CoFe (TC > 1000 K) as a spin source [5]. However, the spin polarization for this device was relatively low. In this study, we used a half-metallic material of Co2MnSi as a spin source and demonstrated spin injection into an AlGaAs/GaAs 2DEG channel with a relatively high spin polarization at 77 K.