[11a-M101-1~11] CS.9 10.1 新物質・新機能創成（作製・評価技術）, 10.2 スピン基盤技術・萌芽的デバイス技術, 10.3 スピンデバイス・磁気メモリ・ストレージ技術,10.4 半導体スピントロニクス・超伝導・強相関のコードシェアセッション

▼ [11a-M101-6] An investigation of gate-induced modulation of the inverse spin Hall effect in ultrathin Cu.

〇Shinichiro Yoshitake¹、Masaya Hokazono¹、Teruya Shinjo¹、Ryo Oshima¹、Yuichiro Ando¹、Masashi Shiraishi¹ (1.Kyoto Univ.)

キーワード：spintronics, Cu, inverse spin Hall effect

In spintronics, inter-conversion between spin current and charge current is quite important. The inverse spin Hall effect (ISHE) is an effect that converts spin current to charge current. The efficiency of the conversion is partly determined by spin Hall conductivity (SHC). Recently, it was reported that the conversion efficiency in the ISHE and the SHC was largely modulated in ultrathin (2 nm) Pt by electric gating. In this study, we focused on ultrathin Cu, which possesses a weak spin-orbit interaction, instead of Pt, a strong spin-orbit interaction material. In this study the modulation of the current due to the ISHE and resistance were observed.