2020年第67回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

3 光・フォトニクス » 3.5 レーザー装置・材料

[12p-B508-1~12] 3.5 レーザー装置・材料

2020年3月12日(木) 13:15 〜 16:30 B508 (2-508)

小澤 祐市(東北大)、古瀬 裕章(北見工大)

14:15 〜 14:30

[12p-B508-5] 19-crystal chip made by room temperature surface activated bonding for
laser amplifier system

〇(D)Arvydas Kausas1、Rui Zhang2、Xiangyu Zhou2、Yousuke Honda2、Mitsuhiro Yoshida2、Takunori Taira3 (1.IMS、2.KEK、3.RIKEN)

キーワード:amplifier, Surface activated bonding, Nd:YAG ceramic

In this work we manufactured 19-crystal chip by room temperature surface activated bonding. In a periodic manner sapphire and ceramic Nd:YAG crystals were combined into 25 mm thick sructure which was used for the amplifier system. By use of 8.85 kW pump with 250 us pump pulse duration the >2 J pump @ 885 nm was introduced into bonded structure in a single pass amplification scheme. Due to a low absorption of the pump wavelength and aperture effect of the ceramic Nd:YAG crystal, less than 1 J of pump power was absorbed. With this setup we received 300 mJ output from the amplifier. In future work bonded chip and pumping setup will be optimised for 1 J output.