2020年第67回応用物理学会春季学術講演会

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6 薄膜・表面 » 6.4 薄膜新材料

[13p-D221-1~14] 6.4 薄膜新材料

2020年3月13日(金) 13:45 〜 18:30 D221 (11-221)

土屋 哲男(産総研)、西川 博昭(近畿大)、大友 明(東工大)

14:45 〜 15:00

[13p-D221-5] Study of the thermal annealing effect on the BiOI based thin film prepared by SILAR

〇(M2)MATIUR MD RAHMAN1、Anissa Adiwena Putri1、Shinya Kato1、Naoki Kishi1、Tetsuo Soga1 (1.Nagoya Inst. of Tech.)

キーワード:Thin film, BiOI based solar cell, SILAR

BiOI came as a promising material because it is safe, less toxic, and stable. Moreover, it has a very promising optical property. Therefore, it was supposed to get decent electrical properties. But unfortunately that not been happened yet. The researcher has continued the investigation to find out different parameter effects. The main purpose of this study to observe the effects of annealing temperature on the electrical properties, optical properties, morphology, and crystalline structure. Here, BiOI thin films have been prepared by using successive ionic layer absorption and reaction (SILAR) process under a different annealing temperature condition. In our study BiOI has been deposited on the top of the FTO by using SILAR process. SILAR process has continued for 30 cycles and then annealed for 1hour in the air at 1000C, 2000C, 3000C, and 4000C temperature condition. Here, with the increasing annealing temperature how the phase and crystalline size changes that has been confirmed by XRD analysis. After phase transformation existence of Bi507I and Bi709I have confirmed at 3000C and 4000C. Again, band gap increases from 1.89eV to 3.2eV as the temperature changes from 1000C to 4000C.Moreover, reduction of current density has confirmed by the measure measurement of I-V characteristics. Meanwhile, I-V characteristics shows that after 2000C annealing temperature, the current density of the BiOI based solar cell started to decrease and gradually going to almost zero at 4000C. In this study, the maximum current density 0.6mA/cm2 and open circuit voltage 0.43 V have been observed at 1000C.