International Display Workshops General Incorporated Association

17:40 〜 18:00

[FMC1-4] LaAlOx/Al2O3 Gate Insulator for Amorphous InGaZnO TFTs to Suppress Permittivity Scattering of Lanthanum Oxide

*Won-Young Kim1, Yuelin Chen1, Sung-Ho Noh1, Yong-Sang Kim1 (1. Sungkyunkwan University(Korea))

LaAlOx/Al2O3, high-k, a-IGZO TFTs

https://doi.org/10.36463/idw.2020.0238

Although lanthanum oxide has a high dielectric constant, it is not suitable as a gate insulator for TFTs due to its hygroscopic property. To suppress this, we propose a fabrication of a LaAlOx/Al2O3 gate insulator by aluminum doping and adding Al2O3 barrier on lanthanum oxide.