The Japan Society of Applied Physics

[S-I-9-5] DLTS Study of Deep Levels in Si-Doped InxAl1-xAs Layers Grown by Molecular Beam Epitaxy

H. Tomozawa、A. Malinin、T. Hashizume、H. Hasegawa (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics, Hokkaido University)

https://doi.org/10.7567/SSDM.1994.S-I-9-5