The Japan Society of Applied Physics

[F-2-2] Extrinsic Base Regrowth of p-InGaN for Npn-type GaN/InGaN Heterojunction Bipolar Transistor

Toshiki Makimoto、Kazuhide Kumakura、Naoki Kobayashi (1.NTT Basic Research Laboratories, NTT Corporation、2.The University of Electro-Communications, Dept. of Applied Physics and Chemistry)

https://doi.org/10.7567/SSDM.2003.F-2-2