[D-5-5L] Effects of tunneling barrier width on the electrical characteristic in Si-QD LEDs

T. Y. Kim^1,3、N. M. Park¹、C. J. Choi²、C. Huh¹、C. G. Ahn¹、G. Y. Sung¹、I. K. You¹、M. Suemitsu³ (1.Electronics and Telecommunications Res. Inst.、2.Univ. of Chonbuk , Korea、3.Tohoku Univ. , Japan)

https://doi.org/10.7567/SSDM.2010.D-5-5L