The Japan Society of Applied Physics

[E-4-3] Improvement of Phosphorus Activation in In-Situ Phosphorus Doped Silicon Epitaxial Film by Cryogenic Silicon Ion-Implantation and Recrystallization Annealing

H. Itokawa1、S. Teehan2、J. Li2、P. W. DeHaven3、N. Berliner2、J. J. Demarest2、N. R. Klymko3、P. Ronsheim3、V. Paruchuri2 (1.Toshiba America Electronic Components, Inc.、2.IBM Research at Albany Nanotech Center、3.IBM Semiconductor Research and Development Center , USA)

https://doi.org/10.7567/SSDM.2011.E-4-3