The Japan Society of Applied Physics

15:00 〜 17:00

[PS-3-05] Performance Comparison of Si, In0.53Ga0.47As and GaSb 10-nm Double Gate nMOSFETs by Deterministically Solving Time Dependent BTE

S. Di1, L. Shen1, Z. Lun1, P. Chang1, K. Zhao1,2, T. Lu1, G. Du1, X. Liu1 (1.Peking Univ.(China), 2.Beijing Info. Sci. and Tech. Univ.(China))

https://doi.org/10.7567/SSDM.2016.PS-3-05