10:40 AM - 1:10 PM
[AMDp1-5] Transfer Characteristics of H2O2-Doped ZrInZnO Thin Film Transistors
TFTs, Solution-process, ZrInZnO, Hydrogen peroxide, Positive bias stress
Solution-processed zirconium-indium-zinc-oxide thin-film transistors (ZIZO TFTs) were fabricated with and without hydrogen peroxide (H2O2). With an incorporation of H2O2 into the channel layer, threshold voltage shift under positive bias stress were improved. We realized the reduced trap density of ZIZO TFTs with 2 M H2O2 incorporation.