[E-8-3] Random Telegraph Signals under External Mechanical Stress: A New Method to Probe Trap Structural Relaxation in MOSFET Gate Dielectrics

K. C. Tu¹, M.J. Chen¹ (1.Univ. of National Chiao Tung , Taiwan)

https://doi.org/10.7567/SSDM.2012.E-8-3