[1H09-13] SiC-2

[1H13] Radiation damage analysis of high purity SiC by TEM

＊Mohd Idzat Idris¹, Toyohiko Yano¹, Katsumi Yoshida¹ (1.Tokyo Institute of Technology)

キーワード：Silicon carbide, Radiation damage, TEM

SiC is a well-known material that has been used in nuclear application due to its excellent mechanical and chemical properties. Exposure to neutron irradiation will degrade the propeties through displacement or transmutation effects. Thus, radiation damage microsturcture in SiC need to be determined by TEM.