[2L14-19] Detector Development

[2L15] Proposal and research of a novel neutron semiconductor detector using BGaN semiconductor materials

*Takayuki Nakano¹, Ken Mochizuki¹, Hisaya Nakagawa², Yoshio Honda³, Hiroshi Amano^3,4, Kazunobu Kojima⁵, Shigefusa F Chichibu^5,3, Hidenori Mimura⁶, Yoku Inoue¹, Toru Aoki⁶ (1. Shizuoka Univ., 2. Nagoya Univ., 3. IMaSS, Nagoya Univ., 4. Akasaki Research Center, 5. IMRAM, Tohoku Univ., 6. R.I.E. Shizuoka Univ.)

Keywords:thermal neutron detector, semiconductor detector, group-III nitride semiconductor, BGaN, diodes

We have proposed a novel thermal neutron detector using BGaN semicondoctor materials. The proposal BGaN detector is a new concept of thermal neutorn detector that performs thermal neutron capture and signal detection in the sensitive layer region. In this study, we tried to fabricate devices and evaluate radiation propertyies.