[3M01-04] SA時燃料挙動と長期保管

[3M01] Steam Oxidation of Silicon Carbide at High Temperature up to 1800^oC

*Hai Vu Pham¹, Yuji Nagae¹, Masaki Kurata¹, Kenichiro Furumoto², Hisaki Sato³, Ryo Ishibashi⁴, Shinichiro Yamashita¹ (1. JAEA, 2. MNF, 3. Toshiba ESS, 4. Hitachi GE)

キーワード：Steam oxidation, SiC, accident tolerant Fuel

Silicon carbide has been considered as a potential candidate for fuel cladding. Many studies have been conducted to investigate the steam oxidation of SiC at temperatures below 1600^oC. However, the steam oxidation behavior of SiC at temperatures above 1600^oC remained unclear due to the lack of test facilities. In this study, we investigated the steam oxidation of SiC at temperatures ranging from 1400-1800^oC using a newly developed laser heating facility.