[3J07-08] SiC 2

[3J07] Effect of Ion Irradiation on Mechanical Properties of Silicon Carbide

*Baopu Wang¹, Yansong Zhong¹, Yina Du¹, Bo Huang, Kanjiro Kawasaki¹, Fujio Shinoda¹, Yasunori Hayashi¹, Tatsuya Hinoki¹ (1. Kyoto Univ.)

Keywords:SiC, Ion irradiation, Nano-indentation, EBSD, Stress distribution

Silicon carbide (SiC) are promising materials in many nuclear environments, which makes it necessary to understand how it’s mechanical property deforms after irradiation.
SiC samples were irradiated to 0.1/1/3/10 dpa by 5.1MeV Si ions at 800℃. Nanoindentation was used in extracting mechanical properties changes caused by irradiation. Hardness and elastic modulus were calculated by the load–displacement curves. Stresses distribution nearby indentation was estimated by electron back scatter diffraction (EBSD) and analysis software.