Poster 1

[PS1-08] Molecular Dynamics Simulation of Dislocations in Silicon Carbide (SiC) Crystal by Newly Developed Machine-Learning Potential

*Ken-ichi Saitoh¹, Kenji Nishimura², Junya Moriguchi³, Kazuhiro Tada³ (1. Department of Mechanical Engineering, Kansai University (Japan), 2. National Institute of Advanced Industrial Science and Technology(AIST) (Japan), 3. Graduate School of Science and Engineering, Kansai University (Japan))

Keywords:Molecular dynamics, Machine Learning, Silicon carbide (SiC), Dislocation, Interatomic potential