Poster 2 (Zoom)

[PS2-O-09] Drift Diffusion Study on Ion-gated Two-dimensional Transistors

*Akiko Ueda¹, Yijin Zhang², Nobuyuki Sano³, Hiroshi Imamura¹, Yoshihiro Iwasa^4,5 (1. AIST (Japan), 2. Inst. Ind. Sci., Univ. Tokyo (Japan), 3. Univ. Tsukuba (Japan), 4. QPEC and Dept. Appl. Phys., Univ. Tokyo (Japan), 5. RIKEN CEMS (Japan))

キーワード：Ion-gated transistors, Transition metal dichalcogenide , Device simulation, Drift diffusion method