Analysis of epitaxial growth mechanism of Si(100) surfaces by quantum chemical calculations

Presentation information

Academic Program (AP)

Theoretical Chemistry, Chemoinformatics, and Computational Chemistry

Sun. Mar 17, 2019 1:10 PM - 5:20 PM D6 (336, Bldg. 3 [3F])

2D6-26～2D6-31　HARUTA, Naoki
2D6-33～2D6-36　SUGIMOTO, Manabu
2D6-39～2D6-42　SUGISAKI, Kenji
2D6-45～2D6-49　OKUMURA, Mitutaka

4:20 PM - 4:30 PM

○HAGINO, Sho; KUNIOSHI, Nilson; FUWA, Akio; YAMAGUCHI, Katsunori (Grad. Sch. Creative Sci. Eng., Waseda Univ.)

PC Setting Time : 16:10 - 16:20

Keywords:Surface reactions、Chemical vapor depositon、Simulation

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