Tu-P: Poster-1

General

Tu-P: Poster-1

✳︎Participants can view e-posters and short presentation videos anytime during Aug. 29 - Sep. 8 on the DRIP XIX website.

2022年8月30日(火) 18:45 〜 20:00 DRIP-Poster-ZOOM

△：Presentation by Applicant for the DRIP "Young Researcher Award"

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△ [TuP-01] Inelastic X-ray scattering measurement on single crystalline GeSn thin film

*Masato Chino¹, Ryo Yokogawa^2,3, Atsushi Ogura^2,3, Hiroshi Uchiyama⁴, Hirokazu Tatsuoka¹, Yosuke Shimura^1,5 (1. Shizuoka Univ., 2. MREL, 3. Meiji Univ., 4. JASRI, 5. Res. Inst. Electron. Shizuoka Univ.)

△ [TuP-02] Band Structure Analyses of Strain-free GeSn (Sn 9%) by Photoluminescence Spectra

*Yuta Ito¹, Ryo Yokogawa^1,2, Naomi Sawamoto^1,2, Atsushi Ogura^1,2, Yosuke Shimura^3,4, Roger Loo⁵, Anurag Vohra^5,6 (1. Meiji University, 2. Meiji Renewable Energy Laboratory, 3. Shizuoka University, 4. Research Institute of Electronics, 5. Interuniversity Microelectronics Center, Leuven, 6. Katholieke Universiteit Leuven)

[TuP-03] Fabrication and Luminescence Characterization of Uniaxial Tensile-strained Ge Wires using Internal Stress in Metal Thin Films

*Takayoshi Shimura¹, Shogo Tanaka¹, Heiji Watanabe¹, Takuji Hosoi² (1. Osaka Univ., 2. Kwansei Gakuin Univ.)

[TuP-04] Electrical Properties of Silicon-Oxide Layers Subjected to High-Temperature Annealing under CVD Growth of Thin Carbon Films

*Oleg Soltanovich¹, Maxim Knyazev¹, Daria Sedlovets¹, Sergei Koveshnikov¹ (1. Institute of Microelectronics Technology RAS)

△ [TuP-05] Investigation of the electrical properties of oxygen precipitates in Czochralski silicon

*Zijing Wang¹, Xuegong Yu¹, Deren Yang¹ (1. Zhejiang Univ.)

[TuP-06] Current Injection-induced Performance Enhancement in n-type Silicon Heterojunction Solar Cells

*Lei Yang¹, Qiyuan He¹, Zechen Hu¹, Xuegong Yu¹, Deren Yang¹ (1. Zhejiang Univ.)

△ [TuP-07] Growth of room-temperature 2D ferromagnet and its terahertz emission

*Tianxiao Nie¹ (1. Beihang University)

[TuP-08] Abnormal Lattice Location of C Impurity in p-type GaN

*Huayang Huang¹, Xuelin Yang¹, Bo Shen¹, Xiaolan Yan², Bing Huang² (1. Peking University, 2. Beijing Computational Science Research Center)

[TuP-09] Point defects in ion implanted GaN and their role of dopant activation studied by positron annihilation spectroscopy

*Akira Uedono¹, Shoji Ishibashi² (1. Univ. of Tsukuba, 2. AIST)

[TuP-10] The Relation between Defects and Reliability of High-Power InGaN Laser Diodes

*Xinlu Chen¹, Haonan Chen¹, Zhibai Zhong¹, Wenyu Kang¹, Wei Lin¹, Junyong Kang¹ (1. Xiamen University)

△ [TuP-11] The crystalline quality of beta-Ga₂O₃ single crystals grown by the specially-developed crucible free growth technique

*Iso Takahashi^1,3, Vladimir Kochurikhin¹, Taketoshi Tomida¹, Yasuhiro Shoji¹, Gushchina Liudmila¹, Yongzhao Yao², Koji Sato², Yukari Ishikawa², Koichi Kakimoto³, Kei Kamada^3,1, Takamasa Sugawara⁴, Akira Yoshikawa^4,1 (1. C & A corp., 2. JFCC, 3. NICHe Tohoku univ., 4. IMR Tohoku univ.)

△ [TuP-12] Conversion characteristics of amphoteric impurity states in ZnO:Cu under low-energy electron beam irradiation

*Jianyu Wang^1,2,4, Sung-Gi Ri³, Toyohiro Chikyow⁴, Yi Shi², Takashi Sekiguchi^4,5 (1. Nanchang Universeity, 2. Nanjing University, 3. Comet Incorporation, 4. National Institute for Materials Science, 5. University of Tsukuba)

[TuP-13] Low temperature growth of ZnMgO thin films by atmospheric spin-coated method using diethylzinc solution

*Kenji Yoshino¹, Yuuta Komaki¹, Masato Imai¹, Tomohiro Higashi¹ (1. University of Miyazaki)

△ [TuP-14] Designing automated defect detection algorithm for characterization of semiconductor wafers

*Shunta Harada¹, Kota Tsujimori¹ (1. Nagoya University)

△ [TuP-15] Cathodoluminescence analysis of the damage produced by catastrophic optical damage in 980 nm laser diodes

Shabnam Dadgostar¹, *Irene Mediavilla Martinez¹, Jorge Souto¹, Juan Jimenez¹ (1. GdS Optronlab, Dpto. Fisica Materia Condensada, Universidad de Valladolid)

[TuP-16] Evaluation of the detection property of an angle selective fountain electron detector

*Takashi Sekiguchi¹, Ryosuke Sonoda¹, Sohma Ogawa¹, Ryota Mitani¹, Kazuhiro Kumagai² (1. University of Tsukuba, 2. National Institute of Advanced Industrial Science and Technology)

△ [TuP-17] Evaluation of Strain-relaxation of Carbon-doped Silicon Nanowires and its Crystal Orientation Dependence using X-ray Diffraction Reciprocal Space Mapping

*Kazutoshi Yoshioka^1,2, Ichiro Hirosawa^1,3, Takeshi Watanabe⁴, Ryo Yokogawa^1,2, Atsushi Ogura^1,2 (1. Meiji University, 2. Meiji Renewable Energy Laboratories, 3. SAGA Light Source, 4. Japan Synchrotron Radiation Research Institute)

△ [TuP-18] Effect of Si vacancies on the thermal diffusion of Aluminum implanted in 4H-SiC

*Jumpei Shirai¹, Masayuki Yamamoto^1,2, Koji Nakayama¹, Hitoshi Umezawa¹, Yasunori Tanaka¹ (1. National Institute of Advanced Industrial Science and Technology, 2. Dept. of Electrical and Electronic Engineering, University of Yamanashi)

[TuP-19] Effect of deep-defects on the energy dissipation of diamond MEMS resonator

Huanying Sun¹, Liwen Sang¹, Yasuo Koide¹, Satohi Koizumi¹, *Meiyong Liao¹ (1. National Institute for Materials Science)

[TuP-20] Investigation of comet-shaped defects in epi-InP layer grown on S-doped and Fe-doped InP substrates

*Lijie Liu¹, Youwen Zhao¹ (1. Institute of Semiconductors , Chinese Academy of Sciences)

[TuP-21] Correlation between the Distributions of the Preferential Glide Plane and the Electrical characteristics in InGaAs Single-Junction Solar Cells

*Akio Ogura¹, Hidetoshi Suzuki², Mitsuru Imaizumi³ (1. Tsukuba Univ., 2. Miyazaki Univ., 3. JAXA)

△ [TuP-22] Anomalous electrical property in GaSb single crystal with low unintentional carbon content

*Guiying Shen¹, Youwen Zhao¹, Jingming Liu¹, Hui Xie¹ (1. Institute of Semiconductors, CAS)

セッション情報

Tu-P: Poster-1

✳︎Participants can view e-posters and short presentation videos anytime during Aug. 29 - Sep. 8 on the DRIP XIX website.

△ [TuP-01] Inelastic X-ray scattering measurement on single crystalline GeSn thin film

△ [TuP-02] Band Structure Analyses of Strain-free GeSn (Sn 9%) by Photoluminescence Spectra

△ [TuP-05] Investigation of the electrical properties of oxygen precipitates in Czochralski silicon

△ [TuP-07] Growth of room-temperature 2D ferromagnet and its terahertz emission

△ [TuP-11] The crystalline quality of beta-Ga2O3 single crystals grown by the specially-developed crucible free growth technique

△ [TuP-12] Conversion characteristics of amphoteric impurity states in ZnO:Cu under low-energy electron beam irradiation

△ [TuP-14] Designing automated defect detection algorithm for characterization of semiconductor wafers

△ [TuP-15] Cathodoluminescence analysis of the damage produced by catastrophic optical damage in 980 nm laser diodes

△ [TuP-17] Evaluation of Strain-relaxation of Carbon-doped Silicon Nanowires and its Crystal Orientation Dependence using X-ray Diffraction Reciprocal Space Mapping

△ [TuP-18] Effect of Si vacancies on the thermal diffusion of Aluminum implanted in 4H-SiC

△ [TuP-22] Anomalous electrical property in GaSb single crystal with low unintentional carbon content

△ [TuP-11] The crystalline quality of beta-Ga₂O₃ single crystals grown by the specially-developed crucible free growth technique