[WeP-01] Crystalline Morphology of SiGe Films Grown on Si(110) Substrates

*Keisuke ARIMOTO Arimoto¹, Chihiro Sakata¹, Kosuke O Hara¹, Junji Yamanaka¹ (1. Univ. of Yamanashi)

△ [WeP-02] Reduced Threading Dislocation Density in a Ge Epitaxial Film on a Submicron-Patterned Si Substrate Grown by Chemical Vapor Deposition

*MOHD FAIZ BIN AMIN¹, Takeshi Hizawa¹, Jose A. Piedra-Lorenzana¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1. Toyohashi Univ. Tech., 2. SUMCO Corp.)

△ [WeP-03] Electrical property investigation of the SiO₂/ Si interface processed by reactive plasma deposition

*Tomohiko Hara¹, Tappei Nishihara^2,4, Tomoya Yamada¹, Yuto Ifuji¹, Yuito Yasukouchi¹, Hirotaka Tamashiro¹, Daiki Nakanishi², Satoshi Yasuno³, Hyunju Lee^2,1, Yoshio Ohshita^1,5, Atsushi Ogura^2,5 (1. Toyota Technol. Inst., 2. Meiji Univ, 3. JASRI, 4. JSPS Research Fellow, 5. Meiji Renewable Energy Laboratory Institute)

[WeP-04] An Enhanced Trench-Filling Epitaxy of Ge on Si for Free-Space Photodetector Application

*Kota Kato¹, Kazuki Motomura¹, Jose A. Piedra-Lorenzana¹, MOHD FAIZ BIN AMIN¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1. Toyohashi Univ. Tech., 2. SUMCO Corp.)

△ [WeP-05] Various doping approaches to achieve high doping level in Cz-Ge ingots

*Aravind Subramanian¹, Alexander Gybin¹, Nikolay Abrosimov¹, R.Radhakrishnan Sumathi¹ (1. Leibniz institute for crystal growth)

△ [WeP-06] Enhancement of Sn induced lateral crystallization of amorphous Ge by using Sn diffusion control

*Kaisei Wakishima¹, Kenji Yoshino², Kenichiro Takakura¹, Isao Tsunoda¹ (1. National Institute of Technology, Kumamoto College, 2. Department of Applied physics and Electronic Engineering, University of Miyazaki)

[WeP-07] Evaluation of Lattice-Spacing of Si and SiGe by NBD using conventional TEM

*Junji Yamanaka¹, Takuya Oguni¹, Joji Furuya¹, Kosuke O. Hara¹, Keisuke Arimoto¹ (1. University of Yamanashi)

[WeP-08] Strain Distributions in Carbon-doped Silicon nanowires on Silicon Substrate

*Ichiro Hirosawa¹, Kazutoshi Yoshioka², Ryo Yokogawa², Atsushi Ogura², Takeshi Watanabe³ (1. SAGA-LS, 2. Meiji Univ., 3. JASRI)

[WeP-09] The influence of indium and gallium point defects diffusion on thermal decomposition of In_xGa_1-xN/GaN MQWs - first principles studies

*Roman Hrytsak^1,2, Malgorzata Sznajder¹, Pawel Kempisty², Mike Leszczynski² (1. Institute of Physics, College of Natural Sciences, University of Rzeszow, Rzeszow, Poland, 2. Institute of High Pressure Physics "Unipress", PAS)

△ [WeP-10] Defects in Ammonothermally and HVPE Grown Bulk GaN Crystals.

*Magdalena Alicja Zajac^1,2, Jan Weyher¹, Tomasz Sochacki¹, Grzegorz Nowak¹, Jan Mizeracki¹, Michał Bockowski¹ (1. Institute of High Pressure Physics of the Polish Academy of Sciences, Warsaw, Poland, 2. Military University of Technology, Faculty of New Technologies and Chemistry, Warsaw, Poland)

△ [WeP-11] Fabrication of Protective ZnO Thin Film on Separator for Lithium Ion Battery

*Yuta Komaki¹, Masato Imai¹, Kenji Yoshino¹ (1. Miyazaki Univ.)

[WeP-12] Estimation of defect depth in ion-implanted β-Ga₂O₃ by plan-view cathodoluminescence

*Ryuichi Sugie¹, Tomoyuki Uchida¹ (1. Toray Research Center Inc.)

△ [WeP-13] Improving the accuracy of simulation of temperature and stress distribution in SiC bulk growth reactor for application of process informatics

*Fumihiro Fujie¹, Satoshi Matsuzawa¹, Kiyoshi Betsuyaku¹, Hidekazu Tsuchida¹ (1. Central Research Institute of Electric Power Industry)

△ [WeP-14] Development of a high-resolution nuclear emulsion plate for X-ray topography observation of large-size semiconductor wafers

*Shunta Harada¹, Kunihiro Morishima¹, Nobuko Kitagawa¹, Atsushi Tanaka¹, Kenji Hanada², Kotaro Ishiji³ (1. Nagoya University, 2. Aichi Synchrtron Radiation Center, 3. Kyushu Synchrotron Light Research Center)

△ [WeP-15] Broadband Polarization Manipulation of Spintronic Terahertz Emitter with High Flexibility

*Yun Sun¹, Yong Xu¹, Yongshan Liu¹, Fan Zhang¹, Houyi Cheng¹, Tianxiao Nie¹, Weisheng Zhao¹, Lianggong Wen¹ (1. Beihang University)

△ [WeP-16] Investigation on Evolution of Basal Plane Dislocation in 4H-SiC Films via Molecular Dynamics

*Haonan Chen¹, Junyong Kang¹, Yongqiang Sun¹, Xinlu Chen¹, Wenyu Kang¹, Wei Lin¹ (1. Xiamen University)

△ [WeP-17] Characterization of extended defects in 4H-SiC by two-photon-absorption-induced current

*Koichi Murata¹, Satoshi Asada¹, Isaho Kamata¹, Hidekazu Tsuchida¹ (1. Central Research Institute of Electric Power Industry (CRIEPI))

[WeP-18] Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process

*Chiharu Ota¹, Johji Nishio¹, Aoi Okada¹, Ryosuke Iijima¹ (1. Toshiba Corporation)

△ [WeP-19] Heat Transfer Optimization in 3D Packaging for Practical-scale Quantum Annealing Machines

*Wei Feng¹, Katsuya Kikuchi¹ (1. National Institute of Advanced Industrial Science and Technology (AIST))

[WeP-20] Analysis of InP/InGaAs p-i-n Photodiode Failed by Electrostatic Discharge

*Yuta Ito¹, Ryo Yokogawa^1,2, Naomi Sawamoto^1,2, Osamu Ueda², Atsushi Ogura^1,2 (1. Meiji University, 2. Meiji Renewable Energy Laboratory)

△ [WeP-21] Reduction of crystal defects in GaP buffer layers grown on Si(100) by MOCVD

*Manali Nandy¹, Agnieszka Paszuk², Markus Feifel³, Christian Koppka⁴, Peter Kleinschmidt⁵, Frank Dimroth⁶, Thomas Hannappel⁷ (1. Technische Universität Ilmenau (TU Ilmenau), 2. Technische Universität Ilmenau (TU Ilmenau), 3. Fraunhofer Institute for Solar Energy Systems ISE, 4. Technische Universität Ilmenau (TU Ilmenau), 5. Technische Universität Ilmenau (TU Ilmenau), 6. Fraunhofer Institute for Solar Energy Systems ISE, 7. Technische Universität Ilmenau (TU Ilmenau))

[WeP-22] Defect characterization and evolution in heavily doped n-type GaAs and Ge modified by sub-second intense light pulses

*Slawomir Prucnal¹, Juanmei Juanmei Duan¹, Shengqiang Zhou¹, Maciej Oskar Liedke², Maik Butterling², Eric Hirschmann², Andreas Wagner², Wojciech Dawidowski³ (1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany, 2. Institute of Radiation Physics Helmholtz-Zentrum Dresden - Rossendorf, Bautzner Landstrasse 400, D-01328 Dresden, Germany , 3. Wrocław University of Science and Technology, Faculty of Electronics, Photonics and Microsystems, Janiszewskiego 11/17, 50-372 Wrocław, Poland)

セッション情報

We-P: Poster-2

✳︎Participants can view e-posters and short presentation videos anytime during Aug. 29 - Sep. 8 on the DRIP XIX website.

[WeP-01] Crystalline Morphology of SiGe Films Grown on Si(110) Substrates

△ [WeP-02] Reduced Threading Dislocation Density in a Ge Epitaxial Film on a Submicron-Patterned Si Substrate Grown by Chemical Vapor Deposition

△ [WeP-03] Electrical property investigation of the SiO₂/ Si interface processed by reactive plasma deposition

[WeP-04] An Enhanced Trench-Filling Epitaxy of Ge on Si for Free-Space Photodetector Application

△ [WeP-05] Various doping approaches to achieve high doping level in Cz-Ge ingots

△ [WeP-06] Enhancement of Sn induced lateral crystallization of amorphous Ge by using Sn diffusion control

[WeP-07] Evaluation of Lattice-Spacing of Si and SiGe by NBD using conventional TEM

[WeP-08] Strain Distributions in Carbon-doped Silicon nanowires on Silicon Substrate

[WeP-09] The influence of indium and gallium point defects diffusion on thermal decomposition of In_xGa_1-xN/GaN MQWs - first principles studies

△ [WeP-10] Defects in Ammonothermally and HVPE Grown Bulk GaN Crystals.

△ [WeP-11] Fabrication of Protective ZnO Thin Film on Separator for Lithium Ion Battery

[WeP-12] Estimation of defect depth in ion-implanted β-Ga₂O₃ by plan-view cathodoluminescence

△ [WeP-13] Improving the accuracy of simulation of temperature and stress distribution in SiC bulk growth reactor for application of process informatics

△ [WeP-14] Development of a high-resolution nuclear emulsion plate for X-ray topography observation of large-size semiconductor wafers

△ [WeP-15] Broadband Polarization Manipulation of Spintronic Terahertz Emitter with High Flexibility

△ [WeP-16] Investigation on Evolution of Basal Plane Dislocation in 4H-SiC Films via Molecular Dynamics

△ [WeP-17] Characterization of extended defects in 4H-SiC by two-photon-absorption-induced current

[WeP-18] Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process

△ [WeP-19] Heat Transfer Optimization in 3D Packaging for Practical-scale Quantum Annealing Machines

[WeP-20] Analysis of InP/InGaAs p-i-n Photodiode Failed by Electrostatic Discharge

△ [WeP-21] Reduction of crystal defects in GaP buffer layers grown on Si(100) by MOCVD

[WeP-22] Defect characterization and evolution in heavily doped n-type GaAs and Ge modified by sub-second intense light pulses

セッション情報

We-P: Poster-2

✳︎Participants can view e-posters and short presentation videos anytime during Aug. 29 - Sep. 8 on the DRIP XIX website.

△ [WeP-02] Reduced Threading Dislocation Density in a Ge Epitaxial Film on a Submicron-Patterned Si Substrate Grown by Chemical Vapor Deposition

△ [WeP-03] Electrical property investigation of the SiO2/ Si interface processed by reactive plasma deposition

△ [WeP-05] Various doping approaches to achieve high doping level in Cz-Ge ingots

△ [WeP-06] Enhancement of Sn induced lateral crystallization of amorphous Ge by using Sn diffusion control

△ [WeP-10] Defects in Ammonothermally and HVPE Grown Bulk GaN Crystals.

△ [WeP-11] Fabrication of Protective ZnO Thin Film on Separator for Lithium Ion Battery

△ [WeP-13] Improving the accuracy of simulation of temperature and stress distribution in SiC bulk growth reactor for application of process informatics

△ [WeP-14] Development of a high-resolution nuclear emulsion plate for X-ray topography observation of large-size semiconductor wafers

△ [WeP-15] Broadband Polarization Manipulation of Spintronic Terahertz Emitter with High Flexibility

△ [WeP-16] Investigation on Evolution of Basal Plane Dislocation in 4H-SiC Films via Molecular Dynamics

△ [WeP-17] Characterization of extended defects in 4H-SiC by two-photon-absorption-induced current

△ [WeP-19] Heat Transfer Optimization in 3D Packaging for Practical-scale Quantum Annealing Machines

△ [WeP-21] Reduction of crystal defects in GaP buffer layers grown on Si(100) by MOCVD

△ [WeP-03] Electrical property investigation of the SiO₂/ Si interface processed by reactive plasma deposition