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Th-1: SiC-1

SiC

Th-1: SiC-1

2022年9月1日(木) 15:00 〜 16:15 DRIP ONLINE CONFERENCE

Chair:Hidekazu Tsuchida、Peder Bergman

△：Presentation by Applicant for the DRIP "Young Researcher Award"

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15:00 〜 15:30

[Th1-1/Inv] Investigation of Defects in Thick 4H-SiC Epitaxial Layers for 10+kV Devices

*Nadeemullah A Mahadik¹, Robert E Stahlbush¹ (1. Naval Research Laboratory)

15:30 〜 15:45

[Th1-2] Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers

*Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Corporate R&D Center, Toshiba Corp.)

15:45 〜 16:00

[Th1-3] Extended defects in SiC: selective etching and Raman study

*Jan Weyher¹, Jaime Freitas², J. Culbertson², Antoin Tiberi³, Grzegorz Nowak¹ (1. Institute of High Pressure Physics, 2. Naval Research Laboratory, 3. Université Montpellier II)

16:00 〜 16:15

[Th1-4] Experimental study on photoelastic coefficient and its wavelength dispersion for quantitative imaging of residual strain in commercial SiC substrates

*Masayuki Fukuzawa¹, Nobuya Kudo¹ (1. Kyoto Institute of Technology)

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