Th-2: SiC-2

2022年9月1日(木) 16:45 〜 18:15 DRIP ONLINE CONFERENCE

Chair:Michael Dudley、Yukari Ishikawa

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16:45 〜 17:15

[Th2-1/Inv] Homoepitaxial growth and defect characterization of 4H-SiC

*Birgit Kallinger¹, Christian Kranert¹, Zara Mercedes Schade¹, Mathias Rommel¹, Patrick Berwian¹ (1. Fraunhofer IISB)

17:15 〜 17:30

[Th2-2] Discussion on carrier lifetime control in a drift layer of 1.2 kV class 4H-SiC devices for suppression of bipolar degradation

Toshiki Mii¹, *Masashi Kato¹, Shunta Harada², Hitoshi Sakane³ (1. Nagoya Inst. of Tech., 2. Nagoya Univ., 3. SHI-ATEX Co. Ltd.)

17:30 〜 17:45

[Th2-3] Strain Evolution in N and Al Ion Implantation Doping in 4H-SiC Epilayers

*Xuan Zhang¹, Jiaxu Gao², Liguo Zhang¹, Xiang Kan¹, Tao Ju¹, Baoshun Zhang¹, Dan Fang² (1. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, 2. Changchun University of Science and Technology)

17:45 〜 18:00

[Th2-4] Cathodoluminescence study of 3C-SiC layer grown on 4H-SiC substrate

*Jun Chen¹, Hiroyuki Sazawa², Wei Yi³, Takashi Sekiguchi⁴ (1. National Institute for Materials Science, 2. National Institute of Advanced Industrial Science and Technology, 3. Kyoto University, 4. University of Tsukuba)

18:00 〜 18:15

[Th2-5] Structural analysis of stacking fault complex/carrot defects with two grooves on the surface of a 4H-SiC epitaxial layer

*Hideki Sako¹, Shohei Hayashi¹, Kenji Kobayashi², Kentaro Ohira², Toshiyuki Isshiki³ (1. Toray Research Center Inc., 2. Hitachi High-Tech Corp., 3. Kyoto Institute of Technology)