We-2: MI & Characterization

[We2-2] Multiscale analysis of dislocation generation at Σ3 grain boundaries during cast growth of high-performance multicrystalline Si ingots

*Yutaka Ohno¹, Hideto Yoshida², Tatsuya Yokoi³, Kenta Yamakoshi³, Takuto Kojima⁴, Kentaro Kutsukake⁵, Hiroyuki Tanaka³, Xin Liu³, Katsuyuki Matsunaga³, Hiroaki Kudo⁴, Koji Inoue¹, Yasuyoshi Nagai¹, Noritaka Usami³ (1. IMR, Tohoku University, 2. SANKEN, Osaka Univ., 3. GSE, Nagoya Univ., 4. GSI, Nagoya Univ., 5. AIP, RIKEN)