Th-1: SiC-1

[Th1-3] Extended defects in SiC: selective etching and Raman study

*Jan Weyher¹, Jaime Freitas², J. Culbertson², Antoin Tiberi³, Grzegorz Nowak¹ (1. Institute of High Pressure Physics, 2. Naval Research Laboratory, 3. Université Montpellier II)