[MO-A1]III-V Semiconductors 1

Mon. Sep 9, 2024 10:15 AM - 11:45 AM International Conference Hall (Hall A) (3F)

Chair:Yoshitaka Okada(The University of Tokyo, Japan)

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10:15 AM - 10:45 AM

[MO-A1-01(Upgrade Invited)] Elevating 2D Hole Mobilities: Breakthroughs in MBE-Grown GaAs Quantum Wells

〇Adbhut Gupta¹, Chengyu Wang¹, Siddharth K. Singh¹, Kirk W. Baldwin¹, Roland Winkler², Mansour Shayegan¹, Loren N. Pfeiffer¹ (1. Princeton University (United States of America), 2. Northern Illinois University (United States of America))

10:45 AM - 11:00 AM

[MO-A1-02] Detection of Bi_Ga Hetero-Antisites at Ga(As,Bi)/(Al,Ga)As Interfaces

〇Esperanza Luna¹, Francisca Marin¹, Janne Puustinen², Joonas Hilska², Mircea Guina², Pekka Laukkanen³, Marko Punkkinen³, Achim Trampert¹ (1. Paul-Drude-Inst. für Festkörperelektronik, Leibniz-Inst. im Forschungsverbund Berlin e.V. (Germany), 2. Tampere Univ. (Finland), 3. Univ. of Turku (Finland))

11:00 AM - 11:15 AM

[MO-A1-03] Antimony Surfactant Effect on Phosphide Based III-V Diluted Nitride alloys

〇Keisuke Yamane¹, Masashi Hikosaka¹, Yamato Kyuno¹, Akihiro Wakahara¹ (1. Toyohashi University of Technology (Japan))

11:15 AM - 11:30 AM

[MO-A1-04] Wafer Scale Ultra-low Density InAs Quantum Dots on GaAs(100)

〇Akshay Kumar Verma¹, Chak Lam Chan¹, Dominic Hallett², Savvas Germanis², Edmund Clarke³, Ian Farrer¹, Maurice S. Skolnick², Jon Heffernan^1,3 (1. Department of Electronic and Electrical Engineering, Univ. of Sheffield (UK), 2. Department of Physics and Astronomy, Univ. of Sheffield (UK), 3. EPSRC National Epitaxy Facility, Univ. of Sheffield (UK))

11:30 AM - 11:45 AM

[MO-A1-05] Influence of Material Disorder on the Performance and Spectral Lineshape of MBE-Grown InAs/InAsSb and InGaAs/InAsSb Type-II Superlattices

〇Marko Milosavljevic^1,2,3, Preston T Webster², Shane R Johnson¹ (1. Arizona State Univ. (United States of America), 2. Air Force Res. Lab (United States of America), 3. A-Tech, LLC, a BlueHalo company (United States of America))

Session information

[MO-A1]III-V Semiconductors 1

[MO-A1-01(Upgrade Invited)] Elevating 2D Hole Mobilities: Breakthroughs in MBE-Grown GaAs Quantum Wells

[MO-A1-02] Detection of Bi_Ga Hetero-Antisites at Ga(As,Bi)/(Al,Ga)As Interfaces

[MO-A1-03] Antimony Surfactant Effect on Phosphide Based III-V Diluted Nitride alloys

[MO-A1-04] Wafer Scale Ultra-low Density InAs Quantum Dots on GaAs(100)

[MO-A1-05] Influence of Material Disorder on the Performance and Spectral Lineshape of MBE-Grown InAs/InAsSb and InGaAs/InAsSb Type-II Superlattices

Authentication

Session information

[MO-A1]III-V Semiconductors 1

[MO-A1-01(Upgrade Invited)] Elevating 2D Hole Mobilities: Breakthroughs in MBE-Grown GaAs Quantum Wells

[MO-A1-02] Detection of BiGa Hetero-Antisites at Ga(As,Bi)/(Al,Ga)As Interfaces

[MO-A1-03] Antimony Surfactant Effect on Phosphide Based III-V Diluted Nitride alloys

[MO-A1-04] Wafer Scale Ultra-low Density InAs Quantum Dots on GaAs(100)

[MO-A1-05] Influence of Material Disorder on the Performance and Spectral Lineshape of MBE-Grown InAs/InAsSb and InGaAs/InAsSb Type-II Superlattices

Authentication

[MO-A1-02] Detection of Bi_Ga Hetero-Antisites at Ga(As,Bi)/(Al,Ga)As Interfaces