[MO-A2-01(Invited)] Epitaxial Growth and Characterization of High ScN Fraction ScAlN on NbN/SiC and Si

〇Matthew Hardy¹ (1. Naval Research Laboratory (United States of America))

13:30 〜 13:45

[MO-A2-02] ScN layers grown on AlN templates with different surface orientations by plasma-assisted molecular beam epitaxy

〇Duc Van Dinh¹, Oliver Brandt¹ (1. Paul-Drude-Institut für Festkörperelektronik (Germany))

13:45 〜 14:00

[MO-A2-03] Epitaxial Integration of Transition-Metal Nitrides with Cubic Gallium Nitride

〇Brelon James May¹, Zachery E. Cresswell^1,2, Kevin D. Vallejo¹ (1. Idaho National Lab. (United States of America), 2. Univ. of Minnesota (United States of America))

14:00 〜 14:15

[MO-A2-04] Surface Oxidation, Band Alignment, and Charge Carrier Transport Properties of Wurtzite Ferroelectrics/GaN Heterostructures

Danhao Wang¹, Ding Wang¹, Samuel Yang¹, 〇Zetian Mi¹ (1. University of Michigan, Ann Arbor (United States of America))

14:15 〜 14:30

[MO-A2-05] Ferroelectric Switching Dynamics of ScAl(Ga)N Grown By Molecular Beam Epitaxy

Samuel Yang¹, Ding Wang¹, Shubham Mondal¹, Jiangnan Liu¹, Mingtao Hu¹, Md Mehedi Hasan Tanim¹, Danhao Wang¹, 〇Zetian Mi¹ (1. University of Michigan (United States of America))

セッション情報

Nitrides