Heterogeneous Epitaxy and Integration 1

Mon. Sep 9, 2024 10:15 AM - 11:45 AM Multipurpose Hall (Hall B) (1F)

Chair:Peter Carrington(University of Lancaster, United Kingdom)

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10:15 AM - 10:45 AM

[MO-B1-01(Invited)] Integration of Crystalline Oxides on Si and Si-on-Insulator (SOI)

〇Alexander A. Demkov¹,
A. B. Posadas² (1. University of Texas, Austin (United States of America)
2. La Luce Cristallina, Inc. (United States of America))

10:45 AM - 11:00 AM

[MO-B1-02] Understanding the Impact of Crystalline Structure of BaTiO₃ Thin Layers Epitaxially Grown on Si on its Electro-Optical Properties

〇Marina Baryshnikova¹, Guillaume Croes¹, Tsang Hsuan Wang¹, Halil Cuma¹, Saeed Sharif Azadeh¹, Mark O'Steen², Stephen Farrel², Ganesh Sundaram², Clement Merckling^1,3 (1. Imec (Belgium), 2. Veeco Instruments Inc. (United States of America), 3. KU Leuven (Belgium))

11:00 AM - 11:15 AM

[MO-B1-03] Al/AlO_x/Al Tri-layer Structure with All-epitaxial Aluminum Films Prepared by MBE with in-situ Ultra-low Pressure Oxidation

〇Thi-Hien Do¹, Chu-Chun Wu¹, Sheng-Di Lin¹ (1. National Yang Ming Chiao Tung Univ. (Taiwan))

11:15 AM - 11:30 AM

[MO-B1-04] Heteroepitaxy of Sb₂Se₃ on GaAs(001) via Molecular Beam Epitaxy

〇Kelly Xiao¹, Pooja D. Reddy¹, Jarod E. Meyer¹, Anna-Katharina M. Preidl¹, Alec M. Skipper², Leland J. Nordin¹, Kunal Mukherjee¹ (1. Stanford Univ. (United States of America), 2. Univ. of California, Santa Barbara (United States of America))

11:30 AM - 11:45 AM

[MO-B1-05] Design, Growth, and Study of Nonlinear-graded Metamorphic Buffers for Fabrication of Low-defect-density InAs(Sb)/In(Ga,Al)As/GaAs Electronic and Photonic Devices

〇Mikhail Chernov¹, Dmitriy Firsov², Oleg Komkov², Pavel Brunkov¹, Victor Solov’ev¹ (1. Ioffe Inst. (Russia), 2. Saint Petersburg Electrotechnical Univ. “LETI” (Russia))

Session information

Heterogeneous Epitaxy and Integration 1

[MO-B1-01(Invited)] Integration of Crystalline Oxides on Si and Si-on-Insulator (SOI)

[MO-B1-02] Understanding the Impact of Crystalline Structure of BaTiO₃ Thin Layers Epitaxially Grown on Si on its Electro-Optical Properties

[MO-B1-03] Al/AlO_x/Al Tri-layer Structure with All-epitaxial Aluminum Films Prepared by MBE with in-situ Ultra-low Pressure Oxidation

[MO-B1-04] Heteroepitaxy of Sb₂Se₃ on GaAs(001) via Molecular Beam Epitaxy

[MO-B1-05] Design, Growth, and Study of Nonlinear-graded Metamorphic Buffers for Fabrication of Low-defect-density InAs(Sb)/In(Ga,Al)As/GaAs Electronic and Photonic Devices

Authentication

Session information

Heterogeneous Epitaxy and Integration 1

[MO-B1-01(Invited)] Integration of Crystalline Oxides on Si and Si-on-Insulator (SOI)

[MO-B1-02] Understanding the Impact of Crystalline Structure of BaTiO3 Thin Layers Epitaxially Grown on Si on its Electro-Optical Properties

[MO-B1-03] Al/AlOx/Al Tri-layer Structure with All-epitaxial Aluminum Films Prepared by MBE with in-situ Ultra-low Pressure Oxidation

[MO-B1-04] Heteroepitaxy of Sb2Se3 on GaAs(001) via Molecular Beam Epitaxy

[MO-B1-05] Design, Growth, and Study of Nonlinear-graded Metamorphic Buffers for Fabrication of Low-defect-density InAs(Sb)/In(Ga,Al)As/GaAs Electronic and Photonic Devices

Authentication

[MO-B1-02] Understanding the Impact of Crystalline Structure of BaTiO₃ Thin Layers Epitaxially Grown on Si on its Electro-Optical Properties

[MO-B1-03] Al/AlO_x/Al Tri-layer Structure with All-epitaxial Aluminum Films Prepared by MBE with in-situ Ultra-low Pressure Oxidation

[MO-B1-04] Heteroepitaxy of Sb₂Se₃ on GaAs(001) via Molecular Beam Epitaxy