〇JIANLIANG HUANG¹ (1. Institute of Semiconductors, Chinese Academy of Sciences (China))

〇Fang - Liu¹, GuanLin - Wu¹, JiaJia - Yao¹ (1. Xidian university (China))

〇Gabin Grégoire¹, Axel Evirgen¹, Bruno Gérard¹, Sylvain Perret², Jean-Michel Gérard² (1. III-V Lab (France), 2. Univ. Grenoble Alpes (France))

〇Adrian Vogt¹, Volker Daumer¹, Elke Diwo-Emmer¹, Lutz Kirste¹, Raphael Müller¹, Robert Rehm¹, Tim Stadelmann¹ (1. Fraunhofer-Inst. for Applied Solid State Physics IAF (Germany))

〇Douglas Crackett¹, Gavin Bell², Dominic Sterland², Philip Mousley³, Hadeel Hussain³, Robert Richards¹ (1. Univ. of Sheffield (UK), 2. Univ. of Warwick (UK), 3. Diamond Light Source (UK))

〇Yuanbo Cheng¹, Hong Lu¹ (1. National Lab. of Solid State Microstructures, College of Engineering and Applied Sci., Nanjing Univ. (China))

〇Bowen Liu^1,2, Yi Gu^1,2, Pingping Chen^1,2, Yingjie Ma^1,2, Chunlei Yu^1,2, Tao Li^1,2, Xiumei Shao^1,2, Xue Li^1,2, Haimei Gong^1,2 (1. Shanghai Inst. of Technical Physics, Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China))

〇Chalermchai - HIMWAS¹, Aritath - Thammathikul¹, Nathachon - Tachapisitpong¹, Wenich - Pumee¹, Songphol - Kanjanachuchai¹ (1. Chulalongkorn University (Thailand))

〇Haowen - Hua^1,2, Yi - Gong¹, Peng - Zhang^1,2, Ying - Gu^1,2, Wenxian - Yang¹, Shulong - Lu¹, Jianjun - Zhu¹ (1. Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS (China), 2. Univ. of Science and Technology of CHINA (USTC) (China))

〇Xuliang - Chai¹, Guoxin - Liu^1,2, Tong - Yang³, Nan - Wang¹, Min - Huang¹, Jianxin - Chen^1,2,3 (1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences (China), 2. ShanghaiTech University (China), 3. Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences (China))

〇Thi-Hien Do¹, Hao Dung¹, Sheng-Di Lin¹ (1. National Yang Ming Chiao Tung University (Taiwan))

〇Luis Vargas¹, Briseida Pérez², Cristo Yee³, Reyna Méndez¹, Yenny Casallas⁴, Salvador Gallardo¹, Mario Zambrano¹, Máximo López¹ (1. CINVESTAV (Mexico), 2. ICAT, UNAM (Mexico), 3. UAS (Mexico), 4. CONAHCyT-UPIITA (Mexico))

〇Zon Ma¹, Zhen-Lun Li¹, Tzu-Wei Lo¹, Charles W. Tu¹ (1. Department of Electrical Engineering, National Chung Hsing University, Taichung (Taiwan))

〇Qiandong Zhuang¹, M Bentley¹, Xiren Chen², Jun Shao², P Carrington¹ (1. Lancaster Uni (UK), 2. Shanghai Inst. of Tech Physics (China))

〇Qiandong Zhuang², Peng Cao¹, Nicholas Davies², P Ghosh², Taincai Wang¹, Hongling Peng¹, Wanhua Zheng¹ (1. Inst. of Semiocnductors (China), 2. Lancaster Uni (UK))

〇Xuefei - Li¹, Wenxian - Yang², Huyin - Zhao^2,3, Junhua - Long⁴, Shulong - Lu⁵ (1. Suzhou Inst. of Nano-Tech & Nano-Bionics, CAS (China), 2. Suzhou Inst. of Nano-Tech & Nano-Bionics, CAS (China), 3. Univ. of Sci. and Tech. of China (China), 4. Suzhou Inst. of Nano-Tech & Nano-Bionics, CAS (China), 5. Suzhou Inst. of Nano-Tech & Nano-Bionics, CAS (China))