[WE-A1-01(Invited)] Valence Band Engineering for Low Noise Photodetectors Enabled Through Dilute Bismide Materials

〇Robert Richards¹ (1. University of Sheffield (UK))

10:30 〜 10:45

[WE-A1-02] Antimonide-based Narrow Bandgap Semiconductors for Infrared Technology and Quantum Information Science

〇Minh B Nguyen¹ (1. HRL Laboratories, LLC. (United States of America))

10:45 〜 11:00

[WE-A1-03] New InGaAsSb Based T2SL for MWIR Detection

Théo SABARDEIL¹, Eva IZQUIERDO¹, Gabin GREGOIRE¹, Bouzid SIMOZRAG¹, Virginie TRINITE¹, Cyril CERVERA², Jean-Baptiste RODRIGUEZ³, Eric TOURNIE³, 〇Axel EVIRGEN¹ (1. III-V Lab (France), 2. CEA LETI (France), 3. Univ. Montpellier (France))

11:00 〜 11:15

[WE-A1-04] Highly sensitive InGaAs/GaAsSb Short-Wavelength Infrared Electron-Injection Photodetector

〇Min - Huang¹, Kecai - Liao¹, Nan - Wang¹, Jianxin - Chen¹ (1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences (China))

11:15 〜 11:30

[WE-A1-05] Carrier Manipulation in Erbium Doped III-V Semiconductor Superlattices for 1550nm Excited Photoconductive Devices

〇Weiwei - Zhang¹, Jinshan - Yao¹, Junjie - Liao¹, Hong - Lu¹ (1. Nanjing Univ. (China))

セッション情報

III-V Semiconductors