13:00 〜 14:30

[TH-PS-20] Mid-Wave Type II InAs/GaSb Superlattice Avalanche Photodiodes with AlAsSb Multiplication Layer

Shaolong Yan¹, Jianliang Huang¹, Yanhua Zhang¹, 〇Wenquan Ma¹ (1. Inst. of Semiconductors, Chinese Academy of Sci. (China))

13:00 〜 14:30

[TH-PS-21] Exploration of artificial graphene with chiral edges on a silicon substrate

〇Yan Zhan¹, Qiang Huang¹, Zuimin Jiang¹, Zhenyang Zhong¹ (1. Fudan University (China))

13:00 〜 14:30

[TH-PS-22] Self-assembly of highly symmetric InAs quantum dots with
low-density on InP (111)A substrates by droplet epitaxy

〇Takaaki Mano¹, Akihiro Ohtake¹, Zhao Ma^1,2, Takashi Kuroda^1,2 (1. NIMS (Japan), 2. Kyushu Univ. (Japan))

13:00 〜 14:30

[TH-PS-23] Temperature Dependence of Energy Gap for GeSn/Ge Multiple Quantum Wells Studied by Modulation Spectroscopy

〇Chin-Wen Ruan¹, Po-Hung Wu¹, Hung-Hsiang Cheng², Ing-Song Yu¹ (1. National Dong-Hwa Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan))

13:00 〜 14:30

[TH-PS-24] Spin-Polarized Light Emission Properties of InGaAs Quantum Dots Sandwiched between Dilute Nitride GaNAs via GaAs Tunnel Barrier

〇Shunsuke Nomura¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1. Hokkaido Univ. (Japan))

13:00 〜 14:30

[TH-PS-25] Room Temperature Electric Field Control of Electron Spin Polarization in InAs Quantum Dots Tunnel-Coupled with an InGaAs Quantum Well

〇Hiroto Kise¹, Satoshi Hiura¹, Junichi Takayama¹, Kazuhisa Sueoka¹, Akihiro Murayama¹ (1. Hokkaido Univ. (Japan))

13:00 〜 14:30

[TH-PS-26] Mechanisms of self-assembled Droplet Etching during MBE:
Experiments and Modelling

〇Christian Heyn¹, Ahmed Alshaikh¹, Robert Blick¹ (1. University of Hamburg (Germany))

13:00 〜 14:30

[TH-PS-27] Enhancing Tunneling Efficiency in MBE-Grown Quantum Wire Tunnel Junctions: Dopant Control and Wigner Crystal Insights

〇Reyna Méndez-Camacho¹, Máximo López-López¹, Esteban Cruz-Hernández² (1. Physics Department, Center for Res. and Advanced Studies of the National Polytechnic Inst. (Mexico), 2. Coordination for the Innovation and Application of Sci. and Tech., Autonomous Univ. of San Luis Potosí, San Luis Potosí (Mexico))

13:00 〜 14:30

[TH-PS-28] Inhomogeneous Indium Deposition for the Growth of InAs Quantum Dots on GaAs(100) with Low Areal Density

〇Normen Auler¹, Dirk Reuter¹ (1. Paderborn Univ. (Germany))

13:00 〜 14:30

[TH-PS-29] Smoothing strategy applied to strain-relaxed buffer layer in InAs quantum wells on GaAs for improving mobility of two-dimensional electron gases.

〇Anna Aleksandrova^1,2, Ekaterina Paysen³, Christian Golz^1,2, Tetiana Barlas^1,4, Zoriana Zhuchenko^1,4, Klaus Biermann³, Achim Trampert³, Helmut Weidlich², W. Ted Masselink¹, Yukihiko Takagaki³ (1. Humboldt Univ. Berlin (Germany), 2. Inst. Kurz GmbH (Germany), 3. Paul Drude Inst. (Germany), 4. V. Lashkaryov Inst. of Semiconductor (Ukraine))

13:00 〜 14:30

[TH-PS-30] Controlled Growth of Gallium Arsenide Nanowires with Embedded Quantum Dots for Single Photon Emission

〇Illia Tikhonov^1,2, Sung-Yul L. Park¹, Jindong Song^1,2 (1. Korean Institute of Science and Technology (Korea), 2. University of Science and Technology (Korea))

13:00 〜 14:30

[TH-PS-31] Effect of Molecular Beam Epitaxial Growth Temperature on Wafer Scale Number Density and Vertical Yield of GaAs Nanowires on 2-inch Si

〇Keisuke Minehisa¹, Takuto Goto¹, Fumitaro Ishikawa¹ (1. Research Center for Integrated Quantum Electronics, Hokkaido Univ. (Japan))

13:00 〜 14:30

[TH-PS-32] AlInN/AlN Quantum Wells Grown on Si(111) Substrates
by Metal Modulated Epitaxy

〇Luis Vargas-Hernandez¹, J. Ivan Hernandez-Martinez², Yenny Casallas-Moreno³, Salvador Gallardo-Hernandez¹, MAXIMO LOPEZ-LOPEZ¹ (1. CINVESTAV-IPN Physics Department (Mexico), 2. CINVESTAV-IPN Unidad Guadalajara (Mexico), 3. CONAHCyT-UPIITA Instituto Politécnico Nacional (Mexico))

13:00 〜 14:30

[TH-PS-33] Effect of mask opening sizes on the nucleation of GaAs nanowires
grown by molecular beam epitaxy on Si(111) substrates

〇Kaito Nakama¹, Akio Higo², Fumitaro Ishikawa¹ (1. Hokkaido Univ. (Japan), 2. d.lab. , Univ. of Tokyo (Japan))

13:00 〜 14:30

[TH-PS-34] Growth of CuCl Submicron Single Crystal Thin Films

〇Masayoshi Ichimiya¹, Tatsuki Ogura¹, Ryuhei Kanazawa¹, Takahiko Ban¹, Junichi Yanagisawa¹ (1. The Univ. of Shiga Prefecture (Japan))

13:00 〜 14:30

[TH-PS-35] Photoluminescence characteristics of GaAs-based dilute nitride nanowires annealed at various temperatures

〇Hidetoshi Hashimoto¹, Ryoga Iida¹, Takuto Goto¹, Kaito Nakama¹, Keisuke Minehisa¹, Fumitaro Ishikawa¹ (1. Research Center for Integrated Quantum Electronics, Hokkaido University (Japan))

13:00 〜 14:30

[TH-PS-36] Wavefunction Manipulation of InAs Surface Quantum Dots via Growth Parameter Adjustment: A Promising Approach for Enhanced Sensing

〇Hanif Mohammadi¹, Ronel Christian Roca¹, Itaru Kamiya¹ (1. Toyota Tech. Inst. (Japan))

13:00 〜 14:30

[TH-PS-37] Epitaxial Growth of Si and Ge on R-Plane and A-Plane Sapphire Substrates

〇Pengshu Chen¹, Miki Horiuchi¹, Kosuke O Hara¹, Junji Yamanaka¹, Keisuke Arimoto¹ (1. Univ. of Yamanashi (Japan))

13:00 〜 14:30

[TH-PS-38] Emission wavelength control of InAs quantum dots via the growth conditions of the capping layers for broadband superluminescent diode applications

〇Tatsuki Yokota¹, Yuuki Carl Hodson¹, Koki Okuno¹, Tao Wang¹, Eiichiro Watanabe², Naoki Ikeda², Nobuhiko Ozaki¹ (1. Univ. of Wakayama (Japan), 2. NIMS (Japan))

13:00 〜 14:30

[TH-PS-39] VCSELs for optical communication at cryogenic temperatures

〇Patrik Rajala¹, Jukka Viheriälä¹, Behzad Namvar¹, Heikki Virtanen¹, Topi Uusitalo¹, Teemu Hakkarainen¹, Mircea Guina¹ (1. Tampere University (Finland))

13:00 〜 14:30

[TH-PS-40] Topological Hall Effect in Bi/Cr2Te3 Heterostructure Thin Films

〇Zijun Yan¹, Wenyu Hu¹, Gan Wang¹ (1. Southern Univ. of Science and Technology (China))

13:00 〜 14:30

[TH-PS-41] Nanoscale Interfacial Thermal Conductance Manipulation

〇Xing Fan¹, Hong Lu¹, Yan Feng Chen¹ (1. Uni. of Nanjing (China))

13:00 〜 14:30

[TH-PS-42] Atomic Plane Strain Associated van der waals Interface Quality of Bi₂Te₃/FeTe Thin Film growth by Molecular Beam Epitaxy

〇Wenyu Hu¹, Xinru Han¹, Jie Jiang¹, Yang Qiu¹, Gan Wang¹ (1. Southern Uni. of Sci. and Tech. (China))

セッション情報

Heterostructures and Nanostructures

[TH-PS-20] Mid-Wave Type II InAs/GaSb Superlattice Avalanche Photodiodes with AlAsSb Multiplication Layer

[TH-PS-21] Exploration of artificial graphene with chiral edges on a silicon substrate

[TH-PS-22] Self-assembly of highly symmetric InAs quantum dots with
low-density on InP (111)A substrates by droplet epitaxy

[TH-PS-23] Temperature Dependence of Energy Gap for GeSn/Ge Multiple Quantum Wells Studied by Modulation Spectroscopy

[TH-PS-24] Spin-Polarized Light Emission Properties of InGaAs Quantum Dots Sandwiched between Dilute Nitride GaNAs via GaAs Tunnel Barrier

[TH-PS-25] Room Temperature Electric Field Control of Electron Spin Polarization in InAs Quantum Dots Tunnel-Coupled with an InGaAs Quantum Well

[TH-PS-26] Mechanisms of self-assembled Droplet Etching during MBE:
Experiments and Modelling

[TH-PS-27] Enhancing Tunneling Efficiency in MBE-Grown Quantum Wire Tunnel Junctions: Dopant Control and Wigner Crystal Insights

[TH-PS-28] Inhomogeneous Indium Deposition for the Growth of InAs Quantum Dots on GaAs(100) with Low Areal Density

[TH-PS-29] Smoothing strategy applied to strain-relaxed buffer layer in InAs quantum wells on GaAs for improving mobility of two-dimensional electron gases.

[TH-PS-30] Controlled Growth of Gallium Arsenide Nanowires with Embedded Quantum Dots for Single Photon Emission

[TH-PS-31] Effect of Molecular Beam Epitaxial Growth Temperature on Wafer Scale Number Density and Vertical Yield of GaAs Nanowires on 2-inch Si

[TH-PS-32] AlInN/AlN Quantum Wells Grown on Si(111) Substrates
by Metal Modulated Epitaxy

[TH-PS-33] Effect of mask opening sizes on the nucleation of GaAs nanowires
grown by molecular beam epitaxy on Si(111) substrates

[TH-PS-34] Growth of CuCl Submicron Single Crystal Thin Films

[TH-PS-35] Photoluminescence characteristics of GaAs-based dilute nitride nanowires annealed at various temperatures

[TH-PS-36] Wavefunction Manipulation of InAs Surface Quantum Dots via Growth Parameter Adjustment: A Promising Approach for Enhanced Sensing

[TH-PS-37] Epitaxial Growth of Si and Ge on R-Plane and A-Plane Sapphire Substrates

[TH-PS-38] Emission wavelength control of InAs quantum dots via the growth conditions of the capping layers for broadband superluminescent diode applications

[TH-PS-39] VCSELs for optical communication at cryogenic temperatures

[TH-PS-40] Topological Hall Effect in Bi/Cr2Te3 Heterostructure Thin Films

[TH-PS-41] Nanoscale Interfacial Thermal Conductance Manipulation

[TH-PS-42] Atomic Plane Strain Associated van der waals Interface Quality of Bi₂Te₃/FeTe Thin Film growth by Molecular Beam Epitaxy

認証