[TH-A2-01(Invited)] Heteroepitaxy of Nanostructures on Silicon for Qubits and Photonics

〇Jianjun Zhang¹ (1. Chinese Academy of Sciences (China))

15:45 〜 16:15

[TH-A2-02(Invited)] Ferroelectricity, Strain and Band Structure Engineering in IV-VI Topological Crystalline Insulator Heterostructures

〇Gunther Springholz¹ (1. Johannes Kepler University Lintz (Austria))

16:15 〜 16:30

[TH-A2-03] Evidence of a Displacive Phase Transformation from Rocksalt and Expanded Stability of Layered PbSe-SnSe Alloys in Heteroepitaxial MBE-grown Thin Films

〇Pooja D Reddy¹, Leland Nordin¹, Lillian Hughes², Anna-Katharina Preidl¹, Kunal Mukherjee¹ (1. Stanford Univ. (United States of America), 2. Univ. of California, Santa Barbara (United States of America))

16:30 〜 16:45

[TH-A2-04] Room Temperature 3 – 8 µm Photoluminescence and Optoelectronic Properties of Heteroepitaxial Pb_1-xSn_xSe on GaAs

〇Jarod E Meyer¹, Leland J Nordin¹, Rigo A Carrasco², Preston T Webster², Kunal Mukherjee¹ (1. Department of Materials Sci. and Eng., Stanford Univ. (United States of America), 2. Air Force Res. Lab., Space Vehicles Directorate, Kirtland AFB (United States of America))

16:45 〜 17:00

[TH-A2-05] Selective Area Epitaxy of In-Plane HgTe Nanostructures on CdTe(001) Substrate

〇Nicolas CHAIZE^1,2, Xavier BAUDRY^1,2, Pierre-Henri JOUNEAU^2,5, Eric GAUTIER^2,5, Jean-Luc ROUVIERE^2,5, Yves DEBLOCK^3,4,7, Bruno GRANDIDIER^3,4,7, Ludovic DESPLANQUE^3,4,7, Hermann SELLIER^2,4,6, Philippe BALLET^1,2 (1. CEA LETI (France), 2. Univ. Grenoble Alpes (France), 3. Univ. Lille (France), 4. CNRS (France), 5. CEA (France), 6. Inst. Néel (France), 7. IEMN (France))

17:00 〜 17:15

[TH-A2-06] Effects of Phosphorous and Antimony Doping on Thin Ge Layers Grown on Si

〇Xueying Yu¹, Hui Jia¹, Junjie Yang¹, Mateus Gallucci Masteghin², Harvey Beere³, Makhayeni Mtunzi¹, Huiwen Deng¹, Suguo Huo⁴, Chong Chen³, Siming Chen¹, Mingchu Tang¹, Stephen J Sweeney⁵, David Ritchie³, Alwyn Seeds¹, Huiyun Liu¹ (1. Univ. College London (UK), 2. Univ. of Surrey (UK), 3. Univ. of Cambridge (UK), 4. London Centre for Nanotechnology (UK), 5. Univ. of Glasgow (UK))

セッション情報

II-VI, IV-VI, IV Semiconductors

[TH-A2-01(Invited)] Heteroepitaxy of Nanostructures on Silicon for Qubits and Photonics

[TH-A2-02(Invited)] Ferroelectricity, Strain and Band Structure Engineering in IV-VI Topological Crystalline Insulator Heterostructures

[TH-A2-03] Evidence of a Displacive Phase Transformation from Rocksalt and Expanded Stability of Layered PbSe-SnSe Alloys in Heteroepitaxial MBE-grown Thin Films

[TH-A2-04] Room Temperature 3 – 8 µm Photoluminescence and Optoelectronic Properties of Heteroepitaxial Pb_1-xSn_xSe on GaAs

[TH-A2-05] Selective Area Epitaxy of In-Plane HgTe Nanostructures on CdTe(001) Substrate

[TH-A2-06] Effects of Phosphorous and Antimony Doping on Thin Ge Layers Grown on Si

認証

セッション情報

II-VI, IV-VI, IV Semiconductors

[TH-A2-01(Invited)] Heteroepitaxy of Nanostructures on Silicon for Qubits and Photonics

[TH-A2-02(Invited)] Ferroelectricity, Strain and Band Structure Engineering in IV-VI Topological Crystalline Insulator Heterostructures

[TH-A2-03] Evidence of a Displacive Phase Transformation from Rocksalt and Expanded Stability of Layered PbSe-SnSe Alloys in Heteroepitaxial MBE-grown Thin Films

[TH-A2-04] Room Temperature 3 – 8 µm Photoluminescence and Optoelectronic Properties of Heteroepitaxial Pb1-xSnxSe on GaAs

[TH-A2-05] Selective Area Epitaxy of In-Plane HgTe Nanostructures on CdTe(001) Substrate

[TH-A2-06] Effects of Phosphorous and Antimony Doping on Thin Ge Layers Grown on Si

認証

[TH-A2-04] Room Temperature 3 – 8 µm Photoluminescence and Optoelectronic Properties of Heteroepitaxial Pb_1-xSn_xSe on GaAs