III-V Semiconductors 3

Fri. Sep 13, 2024 10:15 AM - 11:45 AM Multipurpose Hall (Hall B) (1F)

Chair:Robert Richards (University of Sheffield, United Kingdom)

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10:15 AM - 10:30 AM

[FR-B1-01] Molecular Beam Epitaxial Growth of InGaAs/GaAsSb “W” Quantum Wells for Telecommunications Applications

〇Peter Carrington¹, Matthew Bentley^1,2, Dominic A. Duffy^3,4,5, Igor P. Marko^3,5, Andrew R.J. Marshall², Samir Rihani⁶, Graham Berry⁶, Michael Robertson⁶, John Rawsthorne⁶, Stephen J. Sweeney^3,4,5 (1. School of Engineering, Lancaster Univ. (UK), 2. Department of Physics, Lancaster Univ. (UK), 3. Department of Physics and ATI, Univ. of Surrey (UK), 4. ZiNIR Ltd (UK), 5. James Watt School of Engineering, Univ. of Glasgow (UK), 6. Huawei Technologies Res. and Development, Ipswich Res. Centre (UK))

10:30 AM - 10:45 AM

[FR-B1-02] Buried-Ridge processed InP-based QDash lasers emitting at 1.3 and 1.5 µm

〇Arnaud Wilk^1,2, Oivier Delorme^2,1, Cosimo Calo^2,1, Alexandre Shen^2,1, Emmanuel Bourgon^2,1, Florence Martin^2,1, Karim Mekhazni^2,1, Igor Mijovic^2,1, Nicolas Vaissière^2,1, Frédéric Pommereau^2,1 (1. Nokia-Bell Labs (France), 2. III-V Lab (France))

10:45 AM - 11:00 AM

[FR-B1-03] Investigation of the indium-flush technique on InAs/InAlGaAs/InP (001) quantum dots for 1.55 μm laser applications

Calum Dear¹, Jiajing Yuan¹, Hui Jia¹, Jae-Seong Park¹, Yaonan Hou^2,3, Khalil El Hajraoui^4,5, Haotian Zeng¹, Huiwen Deng¹, 〇Mingchu Tang¹, Quentin Ramasse^4,6, Huiyun Liu¹ (1. Univ. College London (UCL) (UK), 2. Univ. of Southampton (UK), 3. Swansea University (UK), 4. SuperSTEM, Daresbury (UK), 5. Univ. of York (UK), 6. Univ. of Leeds (UK))

11:00 AM - 11:15 AM

[FR-B1-04] Enhancements in Thermal Stability of 1.3 µm InAs/GaAs Quantum Dot Lasers

〇Huiwen Deng¹, Jaesong Park¹, Yangqian Wang¹, Manyu Dang¹, Hui Jia¹, Haotian Zeng¹, Mingchu Tang¹, Huiyun Liu¹ (1. Univ. College London (UK))

11:15 AM - 11:30 AM

[FR-B1-05] Interband Cascade Lasers on Mismatched Substrates Emitting Above 4 µm

〇Maeva Fagot¹, Daniel Andres Diaz-Thomas¹, Audrey Gilbert¹, Gad Kombila¹, Michel Ramonda², Yves Rouillard¹, Alexei Baranov¹, Jean-Baptiste Rodriguez¹, Eric Tournié^1,3, Laurent Cerutti¹ (1. IES, Univ. of Montpellier (France), 2. CTM, Univ. of Montpellier (France), 3. Inst. Univ. de France (France))

11:30 AM - 11:45 AM

[FR-B1-06 (Late News)] sp-d Hybridized Band Structure in n-type Ferromagnetic Semiconductor(In,Fe)As Studied by Resonant Inelastic X-Ray Scattering

M. Kobayashi1,2*, L. D. Anh1,2,3,4, T. Takeda1, H. Kiuchi5, H. Niwa6, J. Miyawaki5, P. N. Hai2,7, M. Oshima5, A. Fujimori8,9, Y. Harada5, and M. Tanaka1,2,10 (1 Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan2 Center for Spintronics Research Network, The University of Tokyo, Tokyo, Japan3 Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo, Tokyo, Japan4 PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama, Japan5 Laser and Synchrotron Research Center, Institute for Solid State Physics, The University of Tokyo, Chiba, Japan6 Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Japan7 Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan8 Department of Physics, The University of Tokyo, Tokyo, Japan9 Department of Physics and Center for Quantum Technology, National Tsing Hua University, Hsinchu, Taiwan10 Institute for Nano Quantum Information Electronics, The University of Tokyo, Tokyo, Japan)

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