Lattice Distortion and Enhanced Carrier Concentration in InAs grown at low temperatures on GaAs (111) B

Md Tauhidul ISLAM

[LN1-PS-02] Lattice Distortion and Enhanced Carrier Concentration in InAs grown at low temperatures on GaAs (111) B

Md Tauhidul ISLAM,1,* and Masashi AKABORI1 (1 School of Materials Science (SMS) and Center for Nano Materials and Technology (CNMT), Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan)

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[LN1-PS-02] Lattice Distortion and Enhanced Carrier Concentration in InAs grown at low temperatures on GaAs (111) B

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