Late News1

[LN1-PS-04] InxAl1-xAs graded buffer materials grown on InP pseudomorphic high electron mobility transistor

Likun Ai*, Fangkun Tian, Anhuai Xu, Hua Huang, Jiaxing Zhang, Ming Qi (State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 China)