Room Temperature 3 – 8 &micro;m Photoluminescence and Optoelectronic Properties of Heteroepitaxial Pb<sub>1-x</sub>Sn<sub>x</sub>Se on GaAs

Jarod E Meyer

16:30 〜 16:45

[TH-A2-04] Room Temperature 3 – 8 µm Photoluminescence and Optoelectronic Properties of Heteroepitaxial Pb_1-xSn_xSe on GaAs

〇Jarod E Meyer¹, Leland J Nordin¹, Rigo A Carrasco², Preston T Webster², Kunal Mukherjee¹ (1. Department of Materials Sci. and Eng., Stanford Univ. (United States of America), 2. Air Force Res. Lab., Space Vehicles Directorate, Kirtland AFB (United States of America))

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講演情報

II-VI, IV-VI, IV Semiconductors

[TH-A2-04] Room Temperature 3 – 8 µm Photoluminescence and Optoelectronic Properties of Heteroepitaxial Pb_1-xSn_xSe on GaAs

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講演情報

II-VI, IV-VI, IV Semiconductors

[TH-A2-04] Room Temperature 3 – 8 µm Photoluminescence and Optoelectronic Properties of Heteroepitaxial Pb1-xSnxSe on GaAs

パスワード

[TH-A2-04] Room Temperature 3 – 8 µm Photoluminescence and Optoelectronic Properties of Heteroepitaxial Pb_1-xSn_xSe on GaAs