II-VI, IV-VI, IV Semiconductors

[TH-A2-06] Effects of Phosphorous and Antimony Doping on Thin Ge Layers Grown on Si

〇Xueying Yu¹, Hui Jia¹, Junjie Yang¹, Mateus Gallucci Masteghin², Harvey Beere³, Makhayeni Mtunzi¹, Huiwen Deng¹, Suguo Huo⁴, Chong Chen³, Siming Chen¹, Mingchu Tang¹, Stephen J Sweeney⁵, David Ritchie³, Alwyn Seeds¹, Huiyun Liu¹ (1. Univ. College London (UK), 2. Univ. of Surrey (UK), 3. Univ. of Cambridge (UK), 4. London Centre for Nanotechnology (UK), 5. Univ. of Glasgow (UK))