Heterogeneous Epitaxy and Integration

[TH-B1-03] Reduction of threading dislocation density in GaSb layers grown on Si(001) by molecular beam epitaxy: misfit dislocation networks

〇Audrey Gilbert¹, Karl Graser², Michel Ramonda¹, Achim Trampert², Éric Tournié^1,3, Jean-Baptiste Rodriguez¹ (1. IES, Univ. of Montpellier (France), 2. Paul-Drude-Inst. of Berlin (Germany), 3. Inst. Univ. of France (France))