Improved Surface Morphology of Magnetic Topological Insulator Vy(BixSb1-x)2-yTe3 by Low Temperature Growth with GaAs Buffer Layer

Yusuke Nakazawa

1:00 PM - 2:30 PM

[TH-PS-05] Improved Surface Morphology of Magnetic Topological Insulator V_y(Bi_xSb_1-x)_2-yTe₃ by Low Temperature Growth with GaAs Buffer Layer

〇Yusuke Nakazawa¹, Takafumi Akiho¹, Kiyoshi Kanisawa¹, Hiroshi Irie¹, Norio Kumada¹, Koji Muraki¹ (1. NTT Basic Research Laboratories (Japan))

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Quantum and Topological Materials

[TH-PS-05] Improved Surface Morphology of Magnetic Topological Insulator V_y(Bi_xSb_1-x)_2-yTe₃ by Low Temperature Growth with GaAs Buffer Layer

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Presentation information

Quantum and Topological Materials

[TH-PS-05] Improved Surface Morphology of Magnetic Topological Insulator Vy(BixSb1-x)2-yTe3 by Low Temperature Growth with GaAs Buffer Layer

Password

[TH-PS-05] Improved Surface Morphology of Magnetic Topological Insulator V_y(Bi_xSb_1-x)_2-yTe₃ by Low Temperature Growth with GaAs Buffer Layer