Smoothing strategy applied to strain-relaxed buffer layer in InAs quantum wells on GaAs for improving mobility of two-dimensional electron gases.

Anna Aleksandrova

1:00 PM - 2:30 PM

[TH-PS-29] Smoothing strategy applied to strain-relaxed buffer layer in InAs quantum wells on GaAs for improving mobility of two-dimensional electron gases.

〇Anna Aleksandrova^1,2, Ekaterina Paysen³, Christian Golz^1,2, Tetiana Barlas^1,4, Zoriana Zhuchenko^1,4, Klaus Biermann³, Achim Trampert³, Helmut Weidlich², W. Ted Masselink¹, Yukihiko Takagaki³ (1. Humboldt Univ. Berlin (Germany), 2. Inst. Kurz GmbH (Germany), 3. Paul Drude Inst. (Germany), 4. V. Lashkaryov Inst. of Semiconductor (Ukraine))

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Presentation information

Heterostructures and Nanostructures

[TH-PS-29] Smoothing strategy applied to strain-relaxed buffer layer in InAs quantum wells on GaAs for improving mobility of two-dimensional electron gases.

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