Effect of Molecular Beam Epitaxial Growth Temperature on Wafer Scale Number Density and Vertical Yield of GaAs Nanowires on 2-inch Si

Keisuke Minehisa

1:00 PM - 2:30 PM

[TH-PS-31] Effect of Molecular Beam Epitaxial Growth Temperature on Wafer Scale Number Density and Vertical Yield of GaAs Nanowires on 2-inch Si

〇Keisuke Minehisa¹, Takuto Goto¹, Fumitaro Ishikawa¹ (1. Research Center for Integrated Quantum Electronics, Hokkaido Univ. (Japan))

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Presentation information

Heterostructures and Nanostructures

[TH-PS-31] Effect of Molecular Beam Epitaxial Growth Temperature on Wafer Scale Number Density and Vertical Yield of GaAs Nanowires on 2-inch Si

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