Effect of mask opening sizes on the nucleation of GaAs nanowires<br />grown by molecular beam epitaxy on Si(111) substrates

Kaito Nakama

1:00 PM - 2:30 PM

[TH-PS-33] Effect of mask opening sizes on the nucleation of GaAs nanowires
grown by molecular beam epitaxy on Si(111) substrates

〇Kaito Nakama¹, Akio Higo², Fumitaro Ishikawa¹ (1. Hokkaido Univ. (Japan), 2. d.lab. , Univ. of Tokyo (Japan))

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Presentation information

Heterostructures and Nanostructures

[TH-PS-33] Effect of mask opening sizes on the nucleation of GaAs nanowires
grown by molecular beam epitaxy on Si(111) substrates

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Presentation information

Heterostructures and Nanostructures

[TH-PS-33] Effect of mask opening sizes on the nucleation of GaAs nanowiresgrown by molecular beam epitaxy on Si(111) substrates

Password

[TH-PS-33] Effect of mask opening sizes on the nucleation of GaAs nanowires
grown by molecular beam epitaxy on Si(111) substrates