Emission wavelength control of InAs quantum dots via the growth conditions of the capping layers for broadband superluminescent diode applications

Tatsuki Yokota

1:00 PM - 2:30 PM

[TH-PS-38] Emission wavelength control of InAs quantum dots via the growth conditions of the capping layers for broadband superluminescent diode applications

〇Tatsuki Yokota¹, Yuuki Carl Hodson¹, Koki Okuno¹, Tao Wang¹, Eiichiro Watanabe², Naoki Ikeda², Nobuhiko Ozaki¹ (1. Univ. of Wakayama (Japan), 2. NIMS (Japan))

Abstract password authentication.
Password is required to view the abstract. A password to download the abstracts will be provided in the Program Booklet distributed at the conference venue.

Presentation information

Heterostructures and Nanostructures

[TH-PS-38] Emission wavelength control of InAs quantum dots via the growth conditions of the capping layers for broadband superluminescent diode applications

Password