Oxides

[TU-A2-03] Epitaxial Growth and Radio-Frequency Characteristics of Ga₂O₃ Field-Effect Transistors with (Al_xGa_1-x)₂O₃ Back-Barrier Layer

〇Takumi Ohtsuki¹, Takafumi Kamimura¹, Masataka Higashiwaki^1,2 (1. National Institute of Information and Communications Technology (Japan), 2. Osaka Metropolitan University (Japan))