Asymmetric Al<sub>0.5</sub>In<sub>0.5</sub>As Shell Growth to Induce Bending and Inhomogeneous Strain in GaAs Nanowires and Analyze Flexoelectricity

Francisca Marín

11:15 〜 11:30

[TU-B1-04] Asymmetric Al_0.5In_0.5As Shell Growth to Induce Bending and Inhomogeneous Strain in GaAs Nanowires and Analyze Flexoelectricity

〇Francisca Marín¹, Esperanza Luna¹, Taseer Anjum², Ullrich Pietsch², Oliver Brandt¹, Lutz Geelhaar¹ (1. Paul-Drude-Inst. für Festkörperelektronik (Germany), 2. Naturwissenschaftlich-Technische Fakultät der Univ. Siegen (Germany))

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講演情報

Heterostructures and Nanostructures

[TU-B1-04] Asymmetric Al_0.5In_0.5As Shell Growth to Induce Bending and Inhomogeneous Strain in GaAs Nanowires and Analyze Flexoelectricity

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講演情報

Heterostructures and Nanostructures

[TU-B1-04] Asymmetric Al0.5In0.5As Shell Growth to Induce Bending and Inhomogeneous Strain in GaAs Nanowires and Analyze Flexoelectricity

パスワード

[TU-B1-04] Asymmetric Al_0.5In_0.5As Shell Growth to Induce Bending and Inhomogeneous Strain in GaAs Nanowires and Analyze Flexoelectricity